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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10749115 B1

PDFFull Text
Date of Patent:
Aug. 18, 2020

Filed:

Jun. 22, 2016

N-doped semiconducting material comprising polar matrix and metal dopant

Applicant:

Novaled Gmbh, Dresden, DE;

Inventors:

Ulrich Denker, Dresden, DE;

Carsten Rothe, Dresden, DE;

Volodymyr Senkovskyy, Dresden, DE;

Tomas Kalisz, Dresden, DE;

Assignee:

Novaled GmbH, Dresden, DE;

Attorney:

Eversheds Sutherland (US) LLP

Primary Examiner:

Thanh T Nguyen

Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0058 (2013.01); H01L 51/002 (2013.01); H01L 51/005 (2013.01); H01L 51/006 (2013.01); H01L 51/0034 (2013.01); H01L 51/0052 (2013.01); H01L 51/0059 (2013.01); H01L 51/0067 (2013.01); H01L 51/0072 (2013.01); H01L 51/0073 (2013.01); H01L 51/5004 (2013.01); H01L 51/5092 (2013.01); H01L 51/5234 (2013.01); H01L 51/56 (2013.01); H01L 51/001 (2013.01); H01L 51/5008 (2013.01); H01L 51/5076 (2013.01); H01L 51/5278 (2013.01); H01L 2251/301 (2013.01); H01L 2251/305 (2013.01); H01L 2251/308 (2013.01); H01L 2251/552 (2013.01);
Abstract

The invention relates to a semiconducting material comprising (i) in substantially elemental form, an electropositive element selected from alkaline metals, alkaline earth metals, rare earth metals, and transition metals, and (ii) at least one first compound which is a compound comprising at least one polar group selected from phosphine oxide group or diazole group; a process for manufacturing the semiconducting material; an electronic device comprising a cathode, an anode and the semiconducting material.

Find Patent Forward Citations

Denker, Ulrich. (2020). N-doped semiconducting material comprising polar matrix and metal dopant (U.S. Patent No. 10749115). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10749115

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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