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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10749106 B1

PDFFull Text
Date of Patent:
Aug. 18, 2020

Filed:

Nov. 01, 2017

Magnetic random access memory device having magnetic tunnel junction

Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Hanns Christoph Adelmann, Wilsele, BE;

Gouri Sankar Kar, Leuven, BE;

Johan Swerts, Kessel-Lo, BE;

Sebastien Couet, Grez-Doiceau, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:

Knobbe, Martens, Olson & Bear, LLP

Primary Examiner:

Brian Turner

Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); G11C 11/14 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 27/222 (2013.01);
Abstract

The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices comprising a magnetic tunnel junction (MTJ). In an aspect, a method of forming a magnetoresistive random access memory (MRAM) includes forming a layer stack above a substrate, where the layer stack includes a ferromagnetic reference layer, a tunnel barrier layer and a ferromagnetic free layer and a spin-orbit-torque (SOT)-generating layer. The method additionally includes, subsequent to forming the layer stack, patterning the layer stack to form a MTJ pillar.

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