The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Dec. 20, 2018
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Chun-Yu Lin, Hsinchu, TW;
Yung-Fu Chang, Hsinchu, TW;
Rong-Ren Lee, Hsinchu, TW;
Kuo-Feng Huang, Hsinchu, TW;
Cheng-Long Yeh, Hsinchu, TW;
Yi-Ching Lee, Hsinchu, TW;
Ming-Siang Huang, Hsinchu, TW;
Ming-Tzung Liou, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/42 (2010.01); H01L 33/40 (2010.01); H01L 33/22 (2010.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/20 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract
An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.