The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
May. 11, 2017
Applicant:
Lumileds Llc, San Jose, CA (US);
Inventors:
Isaac Wildeson, San Jose, CA (US);
Erik Charles Nelson, San Jose, CA (US);
Parijat Deb, San Jose, CA (US);
Assignee:
LUMILEDS LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/22 (2010.01); H01L 33/30 (2010.01); H01L 27/15 (2006.01); H01L 33/04 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 27/15 (2013.01); H01L 33/0008 (2013.01); H01L 33/0025 (2013.01); H01L 33/0062 (2013.01); H01L 33/0095 (2013.01); H01L 33/025 (2013.01); H01L 33/04 (2013.01); H01L 33/22 (2013.01); H01L 33/24 (2013.01); H01L 33/30 (2013.01);
Abstract
In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.