The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Jan. 17, 2019
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Kwangsun Ji, Seoul, KR;

Jin-won Chung, Seoul, KR;

Yujin Lee, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 31/0745 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1872 (2013.01); H01L 31/02167 (2013.01); H01L 31/0745 (2013.01); H01L 31/182 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method for manufacturing a solar cell, includes forming an oxide layer on first surface of a single crystalline silicon substrate; forming a poly crystalline silicon layer doped with a first dopant having a first conductive type on the oxide layer; diffusing a second dopant having a second conductive type opposite to the first conductive type into a second surface of the single crystalline silicon substrate thereby forming a diffusion region; forming a first passivation layer on the poly crystalline silicon layer; forming a second passivation layer on the diffusion region; forming a first electrode connected to the poly crystalline silicon layer by printing a first paste on the first passivation layer and firing through; forming a second electrode connected to the diffusion region by printing a second paste on the second passivation layer and firing through.


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