The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Jun. 10, 2016
Applicants:

University of Florida Research Foundation, Gainesville, FL (US);

Nanoholdings, Llc, Rowayton, CT (US);

Inventors:

Franky So, Cary, NC (US);

Do Young Kim, Jenks, OK (US);

Jae Woong Lee, Raleigh, NC (US);

Bhabendra K. Pradhan, Marietta, GA (US);

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0384 (2006.01); H01L 31/055 (2014.01); H01L 51/42 (2006.01); C01B 19/00 (2006.01); C30B 7/14 (2006.01); C30B 29/46 (2006.01); H01L 27/28 (2006.01); H01L 31/032 (2006.01); H01L 31/072 (2012.01); H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0384 (2013.01); C01B 19/007 (2013.01); C30B 7/14 (2013.01); C30B 29/46 (2013.01); H01L 27/286 (2013.01); H01L 27/288 (2013.01); H01L 31/0324 (2013.01); H01L 31/055 (2013.01); H01L 31/072 (2013.01); H01L 51/426 (2013.01); H01L 51/4273 (2013.01); H01L 51/4293 (2013.01); C01P 2002/82 (2013.01); C01P 2004/04 (2013.01); C01P 2004/64 (2013.01); H01L 2031/0344 (2013.01); Y02E 10/52 (2013.01);
Abstract

Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold.


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