The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Feb. 13, 2018
Applicant:

Alliance for Sustainable Energy, Llc, Golden, CO (US);

Inventors:

David Levi Young, Golden, CO (US);

Myles Aaron Steiner, Denver, CO (US);

John David Simon, Littleton, CO (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/044 (2014.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/0693 (2012.01); H01L 31/068 (2012.01); H01L 31/047 (2014.01); H01L 31/0735 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022458 (2013.01); H01L 31/022441 (2013.01); H01L 31/03042 (2013.01); H01L 31/03046 (2013.01); H01L 31/047 (2014.12); H01L 31/0682 (2013.01); H01L 31/0693 (2013.01); H01L 31/0735 (2013.01); H01L 31/1844 (2013.01); H01L 31/1868 (2013.01); H01L 31/1892 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.


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