The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Dec. 06, 2016
Applicants:

Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd., Shenzhen, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Yi-Chun Kao, New Taipei, TW;

Po-Li Shih, New Taipei, TW;

Wei-Chih Chang, New Taipei, TW;

I-Wei Wu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 21/465 (2006.01); H01L 29/04 (2006.01); H01L 29/417 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02491 (2013.01); H01L 21/02631 (2013.01); H01L 21/465 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 27/1285 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 21/28 (2013.01); H01L 21/76846 (2013.01); H01L 27/3262 (2013.01);
Abstract

A high-performance TFT substrate () for a flat panel display includes a substrate (), a first conductive layer () on the substrate (), a semiconductor layer () positioned on the first conductive layer (), and a second conductive layer () positioned on the semiconductor layer (). The first conductive layer () defines a gate electrode (). The second conductive layer () defines a source electrode () and a drain electrode () spaced apart from the source electrode (). The second conductive layer () includes a first layer () on the semiconductor layer () and a second layer () positioned on the first layer (). The first layer () can be made of metal oxide. The second layer () can be made of aluminum or aluminum alloy.


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