The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Dec. 28, 2018
Applicant:

Fairchild Semiconductor Corporation, Phoenix, AZ (US);

Inventors:

Joseph A. Yedinak, Mountain Top, PA (US);

Richard Stokes, Shavertown, PA (US);

Jason Higgs, Mountain Top, PA (US);

Fred Session, Sandy, UT (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/02104 (2013.01); H01L 29/06 (2013.01); H01L 29/0649 (2013.01); H01L 29/0661 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/4238 (2013.01); H01L 29/7395 (2013.01); H01L 29/7811 (2013.01); H01L 29/7827 (2013.01); H01L 29/0638 (2013.01); H01L 29/42364 (2013.01);
Abstract

In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.


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