The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Mar. 04, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Syotaro Ono, Kanazawa, JP;
Hideto Sugawara, Nonoichi, JP;
Hiroshi Ohta, Kanazawa, JP;
Hisao Ichijo, Kanazawa, JP;
Hiroaki Yamashita, Hakusan, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor device includes first and second electrodes, first, second, third, fourth, fifth, sixth and seventh semiconductor regions, and a gate electrode. The first semiconductor region is provided on the first electrode. The second semiconductor region is provided on a portion of the first semiconductor region. The third semiconductor region is provided on another portion of the first semiconductor region. The fourth semiconductor region is provided in at least a portion between the first and third semiconductor regions. The fifth semiconductor region is provided between the first and fourth semiconductor regions. The sixth semiconductor region is provided on the third semiconductor region. The seventh semiconductor region is provided selectively on the sixth semiconductor region. The gate electrode opposes the second, sixth, and seventh semiconductor regions. The second electrode is provided on the sixth and seventh semiconductor regions.