The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Dec. 04, 2018
Fuji Electric Co., Ltd., Kanagawa, JP;
Takayuki Hirose, Kanagawa, JP;
Yutaka Terao, Tokyo, JP;
Aki Takigawa, Tokyo, JP;
Etsuko Tomita, Tokyo, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A method of evaluating an insulated-gate semiconductor device having an insulated-gate structure including a channel formation layer made of a wide-bandgap semiconductor and a gate insulating film formed contacting the channel formation layer includes removing the gate insulating film in order to expose a surface of the channel formation layer; taking a phase image of the exposed surface of the channel formation layer using a phase mode of an atomic force microscope; evaluating a surface condition of the exposed surface of the channel formation layer by calculating an evaluation metric from phase shift values in the phase image and by determining whether the evaluation metric satisfies a prescribed condition; and determining that the insulated-gate semiconductor device is acceptable when the evaluation metric satisfied the prescribed condition.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile