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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10748989 B1

PDFFull Text
Date of Patent:
Aug. 18, 2020

Filed:

Dec. 07, 2018

Insulating layer structure for semiconductor product, and preparation method of insulating layer structure

Applicant:

Shenyang Silicon Technology Co., Ltd., Shenyang, CN;

Inventors:

Wenlin Gao, Beijing, CN;

Xiang Li, Fushun, CN;

Qingchao Liu, Dandong, CN;

Assignee:

Shenyang Silicon Technology Co., Ltd., Shenyang, CN;

Attorney:

Maier & Maier, PLLC

Primary Examiner:

Allan R Wilson

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/322 (2006.01); H01L 23/58 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/022 (2013.01); H01L 21/0234 (2013.01); H01L 21/02054 (2013.01); H01L 21/02301 (2013.01); H01L 21/02334 (2013.01); H01L 21/3226 (2013.01); H01L 21/76251 (2013.01); H01L 21/76254 (2013.01); H01L 23/585 (2013.01); H01L 23/66 (2013.01);
Abstract

An insulating layer structure for a semiconductor product. The insulating layer structure includes a device substrate, a supporting substrate and a thin film layer. The device substrate and the supporting substrate are silicon wafers. The thin film layer(s) is/are arranged on the device substrate or/and the supporting substrate. The device substrate and the supporting substrate are bonded together through the thin film layer arranged on at least one of the device substrate and the supporting substrate to form an integral multilayer SOI structure. The insulating layer structure formed by the present invention solves problems of serious spontaneous heating of an existing SOI device, severe warpage of an existing SOI structure caused by high-temperature annealing, a poor radio frequency characteristic and the like, and has a predictable relatively higher economic and social value.

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Gao, Wenlin. (2020). Insulating layer structure for semiconductor product, and preparation method of insulating layer structure (U.S. Patent No. 10748989). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10748989

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