The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Sep. 07, 2018
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Hyun Min Cho, Yongin-si, KR;

Shin Il Choi, Yongin-si, KR;

Kyeong Su Ko, Yongin-si, KR;

Sang Gab Kim, Yongin-si, KR;

Joon Geol Lee, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01); H01L 21/3213 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); H01L 21/32136 (2013.01); H01L 27/1225 (2013.01); H01L 27/1229 (2013.01); H01L 27/1255 (2013.01); H01L 27/1262 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01); H01L 51/50 (2013.01);
Abstract

A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other, the first and second transistors being electrically connected to each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, wherein each of the second source electrode and the second drain electrode includes a first layer that includes molybdenum and is provided on the second semiconductor layer, a second layer that includes aluminum and is provided on the first layer, and a third layer that includes titanium and is provided on the second layer.


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