The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

May. 03, 2018
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Daeseok Lee, Grenoble, FR;

Gabriel Molas, Grenoble, FR;

Sami Oukassi, Saint-Egreve, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11568 (2017.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 27/24 (2013.01); H01L 27/2409 (2013.01); H01L 27/249 (2013.01); H01L 29/7923 (2013.01); H01L 29/7926 (2013.01); H01L 45/1233 (2013.01); H01L 45/145 (2013.01); H01L 45/1675 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1226 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01);
Abstract

A semiconductor component includes a first electrode, designated flat electrode, defining a plane; a second electrode, designated active electrode, separated from the first electrode by an electrolyte layer; a pillar, designated vertical pillar, extending essentially along an axis perpendicular to the plane defined by the flat electrode, the pillar including a third electrode, designated vertical electrode and an information storage layer, the information storage layer covering a surface of the vertical electrode; the flat electrode and the vertical pillar being laid out so as to form a memory point. In addition, the materials of the active electrode and the electrolyte layer are chosen so as to form an energy storage zone with the flat electrode.


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