The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Nov. 02, 2018
Applicants:

Hyundai Motor Company, Seoul, KR;

Kia Motors Corporation, Seoul, KR;

Inventor:

Kwang-Joon Han, Seongnam-Si, KR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 21/4825 (2013.01); H01L 21/4846 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 23/295 (2013.01); H01L 23/3135 (2013.01); H01L 23/3142 (2013.01); H01L 23/3675 (2013.01); H01L 23/49537 (2013.01); H01L 23/49562 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/13055 (2013.01);
Abstract

A stack type power module includes: a power semiconductor having a gate and an emitter, each of which has a pad shape, adjacent to each other on one surface of the power semiconductor, and a collector having a pad shape on another surface of the power semiconductor; an upper substrate layer stacked on an upper portion of the power semiconductor, and electrically connected to a metal layer that has a lower surface with which the collector is in contact; and a lower substrate layer stacked on a lower portion of the power semiconductor, and electrically connected to the metal layer that has an upper surface with which each of the gate and the emitter is in contact.


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