The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Jan. 05, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventor:

Gyeongseop Kim, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/027 (2006.01); H01L 27/02 (2006.01); G03F 1/44 (2012.01); G03F 7/20 (2006.01); G06F 30/20 (2020.01); G06F 30/392 (2020.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G03F 1/44 (2013.01); G03F 7/70616 (2013.01); G03F 7/70683 (2013.01); G06F 30/20 (2020.01); G06F 30/392 (2020.01); H01L 21/0274 (2013.01); H01L 27/0203 (2013.01); H01L 22/30 (2013.01);
Abstract

A method for measuring pattern placement error (PPE) on a wafer includes receiving a photomask pattern. One or more unit cell patterns are added to the photomask pattern. Each of the unit cell patterns includes at least one reference design pattern and at least one PPE check design pattern. A photomask is fabricated from the photomask pattern with the one or more unit cell patterns added thereto. A wafer is patterned using the fabricated photomask. A microscope image of the patterned wafer is acquired. Pattern placement error is measured as a displacement between the at least one reference design pattern and the at least one PPE check design pattern.


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