The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Mar. 06, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Torsten Helm, Bannewitz, DE;

Marc Probst, Radeberg, DE;

Uwe Rudolph, Dresden, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/74 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/743 (2013.01); H01L 23/535 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a semiconductor body having a main surface and a rear surface opposite the main surface, and a trench that extends from the main surface of the semiconductor body towards the rear surface, the trench having an upper trench portion and a lower trench portion, the trench having a width measured along a plane parallel to the main surface. The upper trench portion includes curved sidewalls that that bow outward from a bottom of the upper trench portion. The lower trench portion includes generally planar sidewalls that extend from bottom of the upper trench portion at a first depth into the semiconductor body along the first direction to a contact region. An electrically conductive contact electrode is within the trench, is electrically insulated from the semiconductor body along sidewalls of the trench, and electrically connects to the semiconductor body at a bottom of the trench.


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