The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Mar. 14, 2019
Denso Corporation, Kariya, Aichi-pref., JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Shigeyuki Takagi, Kariya, JP;
Masaki Shimomura, Kariya, JP;
Yuichi Takeuchi, Kariya, JP;
Katsumi Suzuki, Nagakute, JP;
Sachiko Aoi, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and on which a base layer is formed is prepared, a trench is provided in the base layer, a silicon carbide layer is epitaxially formed on a surface of the base layer while filling the trench with the silicon carbide layer, the sacrificial layer is planarized by reflow after forming the sacrificial layer, and the silicon carbide layer is etched back together with the planarized sacrificial layer by dry etching under an etching condition in which an etching selectivity of the silicon carbide layer to the sacrificial layer is 1.