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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10748776 B1

PDFFull Text
Date of Patent:
Aug. 18, 2020

Filed:

Feb. 23, 2017

Semiconductor device including contact structure

Applicant:

Japan Science and Technology Agency, Kawaguchi-shi, Saitama, JP;

Inventors:

Akira Toriumi, Tokyo, JP;

Tomonori Nishimura, Tokyo, JP;

Assignee:

JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi-shi, Saitama, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Nduka E Ojeh

Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 21/28 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28537 (2013.01); H01L 21/28 (2013.01); H01L 29/16 (2013.01); H01L 29/41725 (2013.01); H01L 29/45 (2013.01); H01L 29/456 (2013.01); H01L 29/78 (2013.01); H01L 29/872 (2013.01);
Abstract

In the present invention, a contact layer formed of a material having an electron concentration of less than 1×10cmis directly provided on a surface of a semiconductor crystal having an n-type conductivity with a band gap of 1.2 eV or less at room temperature. Consequently, the wave function penetration from the contact layer side to the semiconductor surface side is reduced. As a result, the formation of the energy barrier height·ϕdue to the Fermi level pinning phenomenon is much suppressed. It is possible to achieve the contact with a lower resistivity and with high ohmic properties.

Find Patent Forward Citations

Toriumi, Akira. (2020). Semiconductor device including contact structure (U.S. Patent No. 10748776). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10748776

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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