The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Apr. 26, 2018
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Greg Seok, Round Rock, TX (US);

Fahad Ahmed, San Diego, CA (US);

Chulmin Jung, San Diego, CA (US);

Assignee:

Qualcomm Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/44 (2006.01); G11C 29/10 (2006.01); G11C 29/18 (2006.01); G11C 29/16 (2006.01); G11C 29/50 (2006.01); G11C 29/26 (2006.01); G11C 29/04 (2006.01); G11C 29/38 (2006.01);
U.S. Cl.
CPC ...
G11C 29/44 (2013.01); G11C 29/10 (2013.01); G11C 29/16 (2013.01); G11C 29/26 (2013.01); G11C 29/50 (2013.01); G11C 29/18 (2013.01); G11C 29/38 (2013.01); G11C 2029/0401 (2013.01); G11C 2029/2602 (2013.01);
Abstract

A method and apparatus for memory built-in self-test (MBIST) may be configured to load a testing program from an MBIST controller, execute the testing program, and determine and write pass/fail results to a read-out register. For example, in various embodiments, the testing program may comprise one or more write operations that are configured to change data stored in a plurality of memory bitcells from a first value to a second value while a byte enable signal is asserted in order to test stability associated with a memory bitcell, create DC and AC noise due to byte enable mode stress, check at-speed byte enable mode timing, and execute a self-checking algorithm that may be designed to verify whether data is received at a data input (Din) pin. Any memory bitcells storing a value different from an expected value after performing the write operation(s) may be identified as having failed the MBIST.


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