The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Aug. 22, 2018
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventor:

Hiroshi Tsubouchi, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor memory device includes a memory string with a first selection transistor, a first memory cell, a second memory cell, and a second selection transistor connected in series. A first word line connects to the first memory cell, and a second word line connects to the second memory cell. Selection gates line are connected to first and second selection transistors. A control circuit is configured to control a write operation on the first memory string. The write operation includes a program loop with a program operation and a program verification operation. After the program loop is completed, a first voltage is applied to the first and second word lines and a second voltage is applied to the selection gate lines. The first voltage is sufficient to turn on the first and second memory cells. The second voltage is sufficient to turn on the selection transistors.


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