The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Mar. 04, 2019
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventor:
Jung Hyuk Yoon, Anyang-si, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 8/10 (2006.01); G11C 8/12 (2006.01); G11C 11/56 (2006.01); G11C 8/06 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0028 (2013.01); G11C 8/10 (2013.01); G11C 8/12 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0069 (2013.01); G11C 8/06 (2013.01);
Abstract
A phase change memory device may be provided. The phase change memory device may include a plurality of Mats, a row control block and a column control block. The row control block may be provided to each of the Mats to control word lines. The column control block may be provided to each of the Mats to control bit lines. When a near phase change memory cell adjacent to the row control block and the column control block is selected, the phase change memory cells located at different positions, which may be spaced apart from the near phase change memory cell, in the Mats except for a reference Mat may be selected.