The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Jul. 05, 2019
Applicant:

Shenzhen Epostar Electronics Limited Co., Shenzhen, CN;

Inventor:

Yu-Hua Hsiao, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 11/5642 (2013.01); G11C 16/3459 (2013.01); G11C 2211/5621 (2013.01);
Abstract

A data reading method is provided. The method includes: selecting a target physical page of a target wordline of a rewritable non-volatile memory module; identifying a plurality of distinguishing code patterns corresponding to the target physical page and corresponding one or more transition read voltages; using the one or more transition read voltages to read the target physical page to obtain a distinguishing code of each of a plurality of target memory cells of the target physical page; using one or more assisting read voltage sets corresponding to the one or more transition read voltages to read the target page to obtain an assisting bit value of each of the target memory cells of the target physical page; and combining the distinguishing code and the assisting bit value of each of the target memory cells to obtain an enhanced read bit value of each of the target memory cells.


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