The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Sep. 02, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventor:
Marko Lemke, Dresden, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01); H01G 11/06 (2013.01); H01L 45/00 (2006.01); H01L 27/108 (2006.01); H01G 11/50 (2013.01); H01M 10/42 (2006.01); H01L 27/24 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 8/00 (2013.01); G11C 5/141 (2013.01); G11C 5/147 (2013.01); H01G 11/06 (2013.01); H01G 11/50 (2013.01); H01L 27/1085 (2013.01); H01L 27/10805 (2013.01); H01L 27/2463 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/142 (2013.01); H01L 45/145 (2013.01); H01L 45/1675 (2013.01); H01M 10/425 (2013.01); Y02E 60/13 (2013.01);
Abstract
A memory circuit includes a memory element which includes a first electrode layer including lithium. The memory element further includes a second electrode layer and a solid-state electrolyte layer arranged between the first electrode layer and the second electrode layer. The memory circuit also includes a memory access circuit configured to determine a memory state of the memory element.