The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Aug. 30, 2018
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Joonki Kim, Paju-si, KR;

Kyuhan Yoon, Paju-si, KR;

Sangjin Kim, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); G09G 3/3266 (2016.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 3/3266 (2013.01); H01L 27/3276 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/0251 (2013.01); G09G 2310/0262 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/08 (2013.01);
Abstract

A gate driver and a display device including the same are discussed. The gate driver includes a plurality of stages. Each stage includes a transistor Tconfigured to apply a start signal to a node Q, a transistor Tu configured to output an emission signal of a gate low voltage to a node Na depending on a voltage of the node Q, a transistor Tconfigured to control a voltage of a node QB to be reversed to the voltage of the node Q, a transistor Td configured to output the emission signal of a gate high voltage higher than the gate low voltage to the node Na depending on the voltage of the node QB, and a transistor Tbv connected between the transistor Tand the node Q and configured to stabilize the voltage of the node Q.


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