The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Nov. 20, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Tae-sun Kim, Hwaseong-si, KR;

Young-sik Park, Hwaseong-si, KR;

Min-keun Kwak, Suwon-si, KR;

Byoung-hoon Kim, Yongin-si, KR;

Yong-chul Kim, Daejeon, KR;

Hyun-jeong Lee, Hwaseong-si, KR;

Sung-won Choi, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G06T 7/00 (2017.01); H01L 23/544 (2006.01); H01L 21/68 (2006.01); G01N 21/95 (2006.01); G01N 21/956 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70633 (2013.01); G01N 21/9501 (2013.01); G01N 21/95607 (2013.01); G06T 7/001 (2013.01); H01L 21/681 (2013.01); H01L 23/544 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/30148 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate including an in-cell area and a scribe lane defining the in-cell area, a first overlay pattern on the semiconductor substrate, and a second overlay pattern adjacent to the first overlay pattern, wherein the first overlay pattern is a diffraction-based overlay (DBO) pattern and the second overlay pattern is a scanning electron microscope (SEM) overlay pattern.


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