The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Jun. 08, 2018
Applicant:

Rolls-royce High Temperature Composites Inc., Cypress, CA (US);

Inventors:

Richard W. Kidd, Rancho Palos Verdes, CA (US);

Robert Shinavski, Mission Viejo, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C04B 35/628 (2006.01); C04B 35/80 (2006.01); C04B 35/565 (2006.01); C23C 16/30 (2006.01); D06M 11/58 (2006.01); D06M 11/80 (2006.01); F01D 25/00 (2006.01); D06M 101/16 (2006.01);
U.S. Cl.
CPC ...
C23C 16/342 (2013.01); C04B 35/565 (2013.01); C04B 35/62863 (2013.01); C04B 35/62868 (2013.01); C04B 35/62884 (2013.01); C04B 35/62894 (2013.01); C04B 35/62897 (2013.01); C04B 35/806 (2013.01); C23C 16/308 (2013.01); D06M 11/58 (2013.01); D06M 11/80 (2013.01); F01D 25/005 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/46 (2013.01); C04B 2235/465 (2013.01); C04B 2235/524 (2013.01); C04B 2235/5244 (2013.01); C04B 2235/616 (2013.01); D06M 2101/16 (2013.01); F05D 2300/6033 (2013.01);
Abstract

A method of forming a moisture-tolerant coating on a silicon carbide fiber includes exposing a silicon carbide fiber to a gaseous N precursor comprising nitrogen at an elevated temperature, thereby introducing nitrogen into a surface region of the silicon carbide fiber, and exposing the silicon carbide fiber to a gaseous B precursor comprising boron at an elevated temperature, thereby introducing boron into the surface region of the silicon carbide fiber. Silicon-doped boron nitride is formed at the surface region of the silicon carbide fiber without exposing the silicon carbide fiber to a gaseous Si precursor comprising Si. Thus, a moisture-tolerant coating comprising the silicon-doped boron nitride is grown in-situ on the silicon carbide fiber.


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