The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Dec. 31, 2019
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Assignee:
CREE, INC., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H05K 1/02 (2006.01); H01L 23/498 (2006.01); H05K 1/03 (2006.01); H05K 1/11 (2006.01); H05K 1/18 (2006.01); H05K 1/16 (2006.01); H01L 23/13 (2006.01); H05K 1/14 (2006.01); H05K 3/42 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0213 (2013.01); H01L 23/13 (2013.01); H01L 23/498 (2013.01); H01L 23/49822 (2013.01); H01L 23/49844 (2013.01); H01L 23/66 (2013.01); H05K 1/024 (2013.01); H05K 1/025 (2013.01); H05K 1/0243 (2013.01); H05K 1/0298 (2013.01); H05K 1/0366 (2013.01); H05K 1/111 (2013.01); H05K 1/115 (2013.01); H05K 1/162 (2013.01); H05K 1/183 (2013.01); H01L 23/49833 (2013.01); H01L 2223/6627 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H05K 1/0231 (2013.01); H05K 1/144 (2013.01); H05K 3/421 (2013.01); H05K 3/429 (2013.01); H05K 2201/1003 (2013.01); H05K 2201/10015 (2013.01); H05K 2201/10166 (2013.01); H05K 2203/049 (2013.01);
Abstract
A semiconductor device includes a metal base, a transistor die mounted on the metal base, a lid over the transistor die, and a multilayer printed circuit board electrically connected to the transistor die. The multilayer printed circuit board comprises a first portion positioned between the lid and the metal base, a second portion positioned outside of the lid, a plurality of embedded conductive layers, an embedded dielectric layer disposed between at least two of the plurality of embedded conductive layers, and at least one embedded reactive component formed from at least one of the embedded conductive layers.