The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Jan. 16, 2018
Mems-vision International Inc., Montreal, CA;
Mohannad Elsayed, Verdun, CA;
Mourad El-Gamal, Brossard, CA;
Frederic Nabki, Montreal, CA;
Paul-Vahe Cicek, Montreal, CA;
MEMS Vision International Inc., Montreal, Quebec, CA;
Abstract
Micromachined microelectromechanical systems (MEMS) based resonators offer integration with other MEMS devices and electronics. Whilst piezoelectric film bulk acoustic resonators (FBAR) generally exhibit high electromechanical transduction efficiencies and low signal transmission losses they also suffer from low quality factors and limited resonance frequencies. In contrast electrostatic FBARs can yield high quality factors and resonance frequencies but suffer from increased fabrication complexity. lower electromechanical transduction efficiency and significant signal transmission loss. Accordingly, it would be beneficial to overcome these limitations by reducing fabrication complexity via a single metal electrode layer topping the resonator structure and supporting relatively low complexity/low resolution commercial MEMS fabrication processes by removing the fabrication requirement for narrow transduction gaps. Beneficially, embodiments of the invention provide MEMS circuits with electrostatic tuning and provide resonator designs combining the advantages of piezoelectric actuation and bulk-mode resonators.