The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Sep. 29, 2016
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Frank Singer, Regenstauf, DE;

Norwin Von Malm, Nittendorf, DE;

Tilman Ruegheimer, Regensburg, DE;

Thomas Kippes, Neumarkt, DE;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/024 (2006.01); H01S 5/343 (2006.01); H01S 5/022 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/40 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02469 (2013.01); H01S 5/024 (2013.01); H01S 5/0224 (2013.01); H01S 5/02228 (2013.01); H01S 5/02272 (2013.01); H01S 5/02276 (2013.01); H01S 5/02288 (2013.01); H01S 5/0422 (2013.01); H01S 5/0425 (2013.01); H01S 5/22 (2013.01); H01S 5/343 (2013.01); H01S 5/34313 (2013.01); H01S 5/34326 (2013.01); H01S 5/34333 (2013.01); H01S 5/4025 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/49107 (2013.01); H01S 5/0201 (2013.01); H01S 5/02236 (2013.01); H01S 2301/176 (2013.01);
Abstract

In one embodiment of the invention, the semiconductor laser () comprises a semiconductor layer sequence (). The semiconductor layer sequence () contains an n-type region (), a p-type region () and an active zone () lying between the two. A laser beam is produced in a resonator path (). The resonator path () is aligned parallel to the active zone (). In addition, the semiconductor laser () contains an electrical p-contact () and an electrical n-contact () each of which is located on the associated region () of the semiconductor layer sequence () and is configured to input current directly into the associated region (). A p-contact surface () is electrically connected to the p-contact (), and an n-contact surface () is electrically connected to the n-contact () such that the p-contact surface () and the n-contact surface () are configured for external electrical and mechanical connection of the semiconductor laser (). The contact surfaces () are oriented parallel to a growth direction (G) of the semiconductor layer sequence (). The semiconductor laser () can be surface-mounted without wires.


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