The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Mar. 25, 2019
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Jar-Ming Ho, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01);
Abstract

The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a semiconductor substrate, a first pillar and a second pillar over the semiconductor substrate, an isolation layer over the semiconductor substrate, and a first contact pad and a second contact pad embedded in the isolation layer. A first upper surface of the first pillar is higher than a second upper surface of the second pillar. The first pillar and the second pillar are laterally surrounded by the isolation layer. The first contact pad is disposed over the first pillar. The second contact pad is disposed over the second pillar, and a first pad width of the first contact pad is not greater than a second pad width of the second contact pad.


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