The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Jul. 20, 2017
Applicants:

Konica Minolta, Inc., Chiyoda-ku, JP;

The University of Tokyo, Bunkyo-ku, JP;

Inventors:

Yuichi Takeuchi, Hino, JP;

Takuji Hatano, Suita, JP;

Yasuhiko Ishikawa, Bunkyo-ku, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 27/144 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 27/1446 (2013.01); H01L 31/02161 (2013.01); H01L 31/107 (2013.01);
Abstract

The present invention addresses the issue of providing: a light-receiving element that has an absorption layer of germanium (Ge), is capable of efficiently receiving near infrared light having a large light-reception sensitivity in the absorption layer, from a free space, and has high productivity and low production cost; and a near infrared light detector comprising said light-receiving element. This light-receiving elementhas, laminated in order upon a substrate, an amplification layercontaining silicon (Si), an absorption layercontaining germanium (Ge), and an antireflection layer. The amplification layerhas, in order upon the substrate, at least an n-doped n-Si layerand a p-doped p-Si layer. The absorption layerhas at least a p-doped p-Ge layer


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