The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Feb. 12, 2019
United Semiconductor Japan Co., Ltd., Kuwana-Shi, Mie, JP;
Taiji Ema, Inabe, JP;
Makoto Yasuda, Kuwana, JP;
UNITED SEMICONDUCTOR JAPAN CO., LTD., Kuwana-shi, Mie, JP;
Abstract
A semiconductor device includes a gate insulator layer above a semiconductor substrate, a gate electrode above the gate insulating layer, a sidewall insulator layer on sidewalls of the gate electrode and above the substrate, source and drain regions within the substrate on both sides of the gate electrode, a first region within the substrate below a part of the sidewall insulator layer closer to the source region and having an impurity concentration lower than the source region, a second region provided within the substrate below a part of the sidewall insulator layer closer to the drain region and having an impurity concentration lower than the drain region, a channel region provided within the substrate between the first and second regions, and a third region within the substrate below the channel region and including impurities of a different type and having an impurity concentration higher than the channel region.