The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Jul. 10, 2017
Applicant:
National Semiconductor Corporation, Santa Clara, CA (US);
Inventors:
Yaojian Leng, Portland, OR (US);
Richard Foote, Fort Worth, TX (US);
Steven J. Adler, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0623 (2013.01); H01L 29/66734 (2013.01); H01L 29/7809 (2013.01); H01L 29/42368 (2013.01);
Abstract
A trench DMOS transistor with a very low on-state drain-to-source resistance and a high gate-to-drain charge includes one or more floating islands that lie between the gate and drain to reduce the charge coupling between the gate and drain, and effectively lower the gate-to-drain capacitance.