The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Nov. 08, 2017
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Woochul Jeon, Phoenix, AZ (US);
Ali Salih, Mesa, AZ (US);
Llewellyn Vaughan-Edmunds, Campbell, CA (US);
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/0843 (2013.01); H01L 29/41758 (2013.01); H01L 29/41766 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/872 (2013.01); H01L 29/0619 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01);
Abstract
High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.