The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Nov. 19, 2018
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Cheng-Wei Chou, Taoyuan, TW;
Hsin-Chih Lin, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A method for forming a high electron mobility transistor (HEMT) includes forming a buffer layer on a transparent substrate. The method further includes forming a barrier layer on the buffer layer. A channel region is formed in the buffer layer adjacent to the interface between the buffer layer and the barrier layer. The method further includes forming a dielectric layer on the barrier layer. The method further includes forming source/drain electrodes through the dielectric layer and the barrier layer and disposed on the buffer layer. The method further includes forming a shielding layer conformally covering the dielectric layer and the source/drain electrodes. The method further includes performing a thermal process on the source/drain electrodes.