The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Sep. 12, 2019
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Woochul Jeon, Phoenix, AZ (US);

Chun-Li Liu, Scottsdale, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 23/535 (2006.01); H01L 23/482 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41758 (2013.01); H01L 23/4824 (2013.01); H01L 23/535 (2013.01); H01L 29/2003 (2013.01); H01L 29/42376 (2013.01); H01L 29/7787 (2013.01); H01L 29/7786 (2013.01);
Abstract

Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring; a second layer having a drain pad and a source pad, the drain pad having a width and a source pad having a width substantially the same as the drain pad; wherein a width of each drain finger of the first layer is wider than a width of each source finger of the first layer; and wherein each drain pad is coupled to each drain finger through a first contact and the source pad is coupled to each source finger through a second contact, where a width of the first contact is wider than a width of the second contact.


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