logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10741650 B1

PDFFull Text
Date of Patent:
Aug. 11, 2020

Filed:

Sep. 04, 2017

Semiconductor device and method of manufacturing the same

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Tsutomu Fujita, Yokkaichi Mie, JP;

Takanobu Ono, Kuwana Mie, JP;

Makoto Minaminaka, Suzuka Mie, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Kim & Stewart LLP

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Hajar Kolahdouzan

Int. Cl.
CPC ...
H01L 29/34 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 29/34 (2013.01); H01L 21/268 (2013.01); H01L 21/3247 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 24/03 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 23/3142 (2013.01); H01L 24/05 (2013.01); H01L 24/49 (2013.01); H01L 2224/037 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/4502 (2013.01); H01L 2224/481 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/85123 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/10155 (2013.01); H01L 2924/10156 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a semiconductor element having a substrate with at least two bending portions formed on a first side surface thereof. The two bending portions are displaced from each other in a first direction that is perpendicular to the first side surface of the substrate and parallel to a front surface of the substrate and in a second direction parallel to the front surface of the substrate and perpendicular to a top surface of the substrate. A rearmost portion of the first side surface is substantially perpendicular to the front surface.

Find Patent Forward Citations

Quick Actions:

Fujita, Tsutomu. (2020). Semiconductor device and method of manufacturing the same (U.S. Patent No. 10741650). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10741650

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…