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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10741541 B1

PDFFull Text
Date of Patent:
Aug. 11, 2020

Filed:

Oct. 04, 2016

Method of manufacturing a semiconductor device

Applicant:

Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;

Inventors:

Joachim Weyers, Hoehenkirchen-Siegertsbrunn, DE;

Markus Schmitt, Neubiberg, DE;

Armin Tilke, Dresden, DE;

Stefan Tegen, Dresden, DE;

Thomas Bertrams, Dresden, DE;

Assignee:

Infineon Technologies Dresden GmbH, Dresden, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Savitri Mulpuri

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/02667 (2013.01); H01L 21/76 (2013.01); H01L 21/76213 (2013.01); H01L 29/66712 (2013.01); H01L 29/861 (2013.01); H01L 29/0634 (2013.01); H01L 29/417 (2013.01); H01L 29/4238 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process. Herein a cover oxide layer is formed on the polycrystalline silicon layer.

Find Patent Forward Citations

Weyers, Joachim. (2020). Method of manufacturing a semiconductor device (U.S. Patent No. 10741541). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10741541

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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