The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Feb. 04, 2019
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventor:

Shinya Suzuki, Nanae, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/485 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 27/13 (2006.01); H01L 29/78 (2006.01); G02F 1/1345 (2006.01); G02F 1/133 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); G02F 1/1345 (2013.01); G02F 1/13306 (2013.01); G02F 1/13439 (2013.01); G02F 1/13458 (2013.01); G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/768 (2013.01); H01L 21/76819 (2013.01); H01L 23/485 (2013.01); H01L 23/522 (2013.01); H01L 23/528 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/81 (2013.01); H01L 27/13 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); G02F 2001/133302 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 29/7833 (2013.01); H01L 2224/02122 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/051 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05075 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13027 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/14153 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/271 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29355 (2013.01); H01L 2224/29444 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/81 (2013.01); H01L 2224/8185 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/83101 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83851 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/93 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01041 (2013.01); H01L 2924/01057 (2013.01); H01L 2924/01072 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1426 (2013.01); H01L 2924/15788 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30105 (2013.01);
Abstract

A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.


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