The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
May. 02, 2017
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Setagaya, JP;
Yasuharu Hosaka, Tochigi, JP;
Toshimitsu Obonai, Shimotsuke, JP;
Junichi Koezuka, Tochigi, JP;
Yukinori Shima, Tatebayashi, JP;
Masahiko Hayakawa, Tochigi, JP;
Takashi Hamochi, Tochigi, JP;
Suzunosuke Hiraishi, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.