The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Feb. 12, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Shunsuke Asaba, Kawasaki, JP;
Ryosuke Iijima, Setagaya, JP;
Yukio Nakabayashi, Yokohama, JP;
Shigeto Fukatsu, Yokohama, JP;
Toshihide Ito, Shibuya, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include performing a first heat treatment of a first film at a first temperature not less than 500° C. and not more than 900° C. in a first atmosphere including oxygen. The first film includes silicon and oxygen and is deposited on a semiconductor member including silicon carbide. The method can include performing, after the first heat treatment, a second heat treatment of the first film at a second temperature not less than 1200° C. but less than 1400° C. in a second atmosphere including nitrogen.