The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Sep. 18, 2018
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Mohsen Purahmad, San Ramon, CA (US);

Chao-Han Cheng, San Jose, CA (US);

Dongxiang Liao, Sunnyvale, CA (US);

Bo Lei, San Ramon, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 29/52 (2006.01); G11C 16/14 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/3495 (2013.01); G11C 29/52 (2013.01); G11C 11/5621 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01);
Abstract

A data storage system may include a non-volatile memory device, having one or more wordlines configured to receive a read level voltage, and a controller. The controller is configured to detect whether a write abort event occurred for the data storage system. The controller is configured to determine a first voltage offset based on one or more of a wear-level indication of the non-volatile memory device, or one or more voltage parameters of the non-volatile memory device. The controller is configured to determine, based on the first voltage offset, an adjusted read level voltage. The controller is configured to apply the adjusted read level voltage to a wordline of the non-volatile memory device. The controller is configured to read data, based on the applied adjusted read level voltage, from the wordline of the non-volatile memory device. Methods are also described.


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