The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Sep. 18, 2018
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Inventors:

Haifeng Hu, Beijing, CN;

Ming Zhang, Beijing, CN;

Xianlin Ding, Beijing, CN;

Weijie Ma, Beijing, CN;

Huan Liu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/047 (2006.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); H01L 21/027 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G06F 3/047 (2013.01); G03F 7/2002 (2013.01); G06F 3/044 (2013.01); G06F 3/0412 (2013.01); G06F 3/04164 (2019.05); H01L 21/0273 (2013.01); G06F 2203/04103 (2013.01);
Abstract

A method for manufacturing a display substrate includes: providing a substrate; forming a film layer and a photoresist layer to be patterned on the substrate; exposing and developing the photoresist layer to form a photoresist pattern including a first photoresist pattern and a second photoresist pattern, the first photoresist pattern corresponding to a film layer pattern to be formed, and the second photoresist pattern being located on at least two opposite sides of the first photoresist pattern, and spaced apart from the first photoresist pattern; wet-etching the film layer to be patterned so that a film layer between the first photoresist pattern and the second photoresist pattern is etched, a film layer under the second photoresist pattern being detached from the substrate, and a film layer under the first photoresist pattern forming the film layer pattern.


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