The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Feb. 28, 2018
Applicant:

Artilux, Inc., Menlo Park, CA (US);

Inventors:

Yun-Chung Na, Zhubei, TW;

Che-Fu Liang, Zhubei, TW;

Szu-Lin Cheng, Zhubei, TW;

Shu-Lu Chen, Zhubei, TW;

Kuan-Chen Chu, Zhubei, TW;

Chung-Chih Lin, Zhubei, TW;

Han-Din Liu, Zhubei, TW;

Assignee:

Artilux, Inc., Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/4863 (2020.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01); G01S 17/10 (2020.01); G01S 17/89 (2020.01);
U.S. Cl.
CPC ...
G01S 7/4863 (2013.01); G01S 17/10 (2013.01); G01S 17/89 (2013.01); H01L 27/14629 (2013.01); H01L 27/14643 (2013.01); H01L 31/103 (2013.01); H01L 31/1037 (2013.01);
Abstract

An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal. The one or more first switches include a first trench located between the first p-doped region and the first n-doped region. The one or more second switches include a second trench located between the second p-doped region and the second n-doped region.


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