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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10737947 B1

PDFFull Text
Date of Patent:
Aug. 11, 2020

Filed:

Apr. 17, 2019

Zinc nitride compound and method for producing same

Applicant:

Panasonic Corporation, Kadoma-shi, Osaka, JP;

Inventors:

Fumiyasu Oba, Tokyo, JP;

Hideo Hosono, Tokyo, JP;

Hidenori Hiramatsu, Tokyo, JP;

Hideya Kumomi, Tokyo, JP;

Yu Kumagai, Tokyo, JP;

Soshi Iimura, Tokyo, JP;

Yoshinori Muraba, Tokyo, JP;

Lee Alan Burton, Tokyo, JP;

Isao Tanaka, Kyoto, JP;

Yoyo Hinuma, Chiba, JP;

Assignee:

PANASONIC CORPORATION, Osaka, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Katie L Hammer

Int. Cl.
CPC ...
C01G 9/00 (2006.01); C01B 21/06 (2006.01); C09K 11/08 (2006.01); C09K 11/55 (2006.01); C09K 11/54 (2006.01); H01L 29/24 (2006.01); H01L 31/032 (2006.01); H01L 33/26 (2010.01); C01G 9/08 (2006.01); H01L 31/18 (2006.01); H01L 31/0248 (2006.01); H01L 31/0256 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
C01G 9/006 (2013.01); C01B 21/0602 (2013.01); C01G 9/00 (2013.01); C01G 9/08 (2013.01); C09K 11/0883 (2013.01); C09K 11/54 (2013.01); C09K 11/55 (2013.01); H01L 29/24 (2013.01); H01L 31/0248 (2013.01); H01L 31/0256 (2013.01); H01L 31/032 (2013.01); H01L 31/18 (2013.01); H01L 33/00 (2013.01); H01L 33/26 (2013.01); C01P 2002/72 (2013.01); C01P 2002/77 (2013.01); C01P 2006/40 (2013.01); Y02P 70/521 (2015.11);
Abstract

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZnNor the chemical formula XZnNwherein Xis Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

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