The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Jan. 18, 2017
Applicants:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Sumitomo Electric Hardmetal Corp., Itami-shi, JP;

Inventors:

Takuya Nohara, Itami, JP;

Natsuo Tatsumi, Itami, JP;

Yoshiki Nishibayashi, Itami, JP;

Hitoshi Sumiya, Itami, JP;

Yutaka Kobayashi, Itami, JP;

Akihiko Ueda, Itami, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/26 (2017.01); C23C 16/01 (2006.01); C30B 25/08 (2006.01); C30B 25/20 (2006.01); C30B 29/04 (2006.01); H01L 21/205 (2006.01); A44C 27/00 (2006.01); C30B 25/12 (2006.01); C23C 16/02 (2006.01); C23C 16/27 (2006.01); C23C 16/458 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
C01B 32/26 (2017.08); A44C 27/00 (2013.01); C23C 16/01 (2013.01); C23C 16/0236 (2013.01); C23C 16/27 (2013.01); C23C 16/274 (2013.01); C23C 16/277 (2013.01); C23C 16/4581 (2013.01); C30B 25/08 (2013.01); C30B 25/12 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 25/205 (2013.01); C30B 29/04 (2013.01); H01L 21/205 (2013.01);
Abstract

Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.


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