The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

May. 31, 2019
Applicant:

The Boeing Company, Chicago, IL (US);

Inventors:

Manuel Cabanas-Holmen, Roy, WA (US);

Jeff Maharrey, Mountlake Terrace, WA (US);

Salim Rabaa, Lake Forest Park, WA (US);

Assignee:

The Boeing Company, Chicago, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/20 (2006.01); H03K 19/00 (2006.01); H03K 19/003 (2006.01); H03K 19/007 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 19/00315 (2013.01); H03K 17/163 (2013.01); H03K 19/007 (2013.01); H03K 19/0033 (2013.01); H03K 19/20 (2013.01); H03K 19/00338 (2013.01); H03K 19/00361 (2013.01);
Abstract

Systems, methods, and apparatus for complementary self-limiting logic are disclosed. In one or more embodiments, a method for mitigating errors caused by transients in a logic gate transistor comprises biasing, by a first stage of transistors, a second stage of transistors such that a voltage potential across terminals of each of the transistors of the second stage are at an equal voltage potential. The method further comprises biasing, by the second stage of transistors, the logic gate transistor such that a voltage potential across terminals of the logic gate transistor are at an equal voltage potential, thereby ensuring that the transients will not cause the logic gate transistor to erroneously change logic states when the logic gate transistor is in a logically off state.


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