The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Apr. 01, 2019
Applicant:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Inventors:
Shota Ishihara, Kyoto, JP;
Yasuhisa Yamamoto, Kyoto, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Kyoto-Fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 1/56 (2006.01); H03F 3/19 (2006.01); H03F 1/30 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0211 (2013.01); H03F 1/0261 (2013.01); H03F 1/30 (2013.01); H03F 1/56 (2013.01); H03F 3/19 (2013.01); H03F 3/21 (2013.01); H03F 2200/18 (2013.01); H03F 2200/222 (2013.01); H03F 2200/318 (2013.01); H03F 2200/387 (2013.01); H03F 2200/411 (2013.01); H03F 2200/444 (2013.01); H03F 2200/447 (2013.01); H03F 2200/451 (2013.01);
Abstract
A power amplifier module includes a power amplifier circuit and a control IC. The power amplifier circuit includes a bipolar transistor that amplifies power of an RF signal and outputs an amplified signal. The control IC includes an FET, which serves as a bias circuit that supplies a bias signal to the bipolar transistor. The FET is operable at a threshold voltage lower than that of the bipolar transistor, thereby making it possible to decrease the operating voltage of the power amplifier module.