The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Oct. 21, 2019
Applicant:

Genesis Photonics Inc., Tainan, TW;

Inventors:

Yi-Ru Huang, Tainan, TW;

Tung-Lin Chuang, Tainan, TW;

Yan-Ting Lan, Tainan, TW;

Sheng-Tsung Hsu, Tainan, TW;

Chih-Ming Shen, Tainan, TW;

Jing-En Huang, Tainan, TW;

Teng-Hsien Lai, Tainan, TW;

Hung-Chuan Mai, Kaohsiung, TW;

Kuan-Chieh Huang, New Taipei, TW;

Shao-Ying Ting, Tainan, TW;

Cheng-Pin Chen, Tainan, TW;

Wei-Chen Chien, Tainan, TW;

Chih-Chin Cheng, Tainan, TW;

Chih-Hung Tseng, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/36 (2010.01); H01L 33/60 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/36 (2013.01); H01L 33/382 (2013.01); H01L 33/46 (2013.01); H01L 33/465 (2013.01); H01L 33/60 (2013.01); H01L 33/385 (2013.01); H01L 33/387 (2013.01); H01L 33/405 (2013.01);
Abstract

The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.


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